PART |
Description |
Maker |
ARF450 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
BSP75G BSP75G2 |
Ultra Low Capacitance Transient Voltage Suppressor Diodes 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET?/a> MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET⑩ MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET??MOSFET IntelliFET 60V self protected MOSFET
|
List of Unclassifed Manufacturers ETC N.A. Zetex Semiconductors
|
STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
STP9NB50FP STP9NB50 5368 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
STMicroelectronics N.V. 意法半导
|
STP4NB50FP STP4NB50 5320 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
意法半导 STMicro
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
ARF475LF ARF475FL |
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs From old datasheet system RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
|
ADPOW Advanced Power Technology
|
TN2010T |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电00V,夹断电.12AN沟道增强型MOSFET晶体 N-Channel Enhancement-Mode MOSFET Transistor
|
Vishay Intertechnology,Inc. ETC
|
MGSF3455XT1 MGSF3455XT1_D ON1912 ON1911 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET P-CHANNEL ENHANCEMENT?ODE From old datasheet system
|
ON Semi MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
AP25P15GI14 AP25P15GI |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
|
Advanced Power Electronics Corp.
|